1 edition 1.4 august 2004 FLM1414-3F internally matched power gaas fet item drain-source voltage gate-source voltage total power dissipation storage temperature channel temperature symbol v ds v gs 15 -5 25 -65 to +175 175 t c = 25 c v v w c c p t t stg t ch condition unit rating absolute maximum rating (ambient temperature ta=25 c) fujitsu recommends the following conditions for the reliable operation of gaas fets: 1. the drain-source operating voltage (v ds ) should not exceed 10 volts. 2. the forward and reverse gate currents should not exceed 13.0 and -1.4 ma respectively with gate resistance of 100 ? . item saturated drain current transconductance pinch-off voltage gate source breakdown voltage output power at 1db g.c.p. power gain at 1db g.c.p. symbol i dss - 1400 2100 -0.5 -1.5 -3.0 34.0 35.0 - 6.0 6.5 - v ds = 5v, i ds = 70ma v ds = 5v, i ds = 900ma v ds = 5v, v gs = 0v i gs = -70 a v ds = 10v, i ds = 0.6 i dss (typ.), f = 14.0 ~ 14.5 ghz, z s = z l = 50 ? ma v - 1400 - ms -5 - - v db dbm g m v p v gso p 1db g 1db drain current - 900 1100 ma i dsr power-added efficiency -27- % add gain flatness -- 0.6 db ? g thermal resistance channel to case - 5.0 6.0 c/w r th 3rd order intermodulation distortion f = 14.5ghz, ? f = 10mhz 2-tone test pout = 24.0dbm s.c.l. -44 -46 - dbc im 3 test conditions unit limit typ. max. min. electrical characteristics (ambient temperature ta=25 c) case style: ia g.c.p.: gain compression point, s.c.l.: single carrier level 10v x i dsr x r th channel temperature rise -- 66 c ? t ch features ?high output power: p 1db = 35dbm (typ.) ?high gain: g 1db = 6.5db (typ.) ?high pae: add = 27% (typ.) ?low im 3 = -46dbc@po = 24.0dbm (typ.) ?broad band: 14.0 ~ 14.5ghz ?impedance matched zin/zout = 50 ? ?hermetically sealed description the FLM1414-3F is a power gaas fet that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. eudyna s stringent quality assurance program assures the highest reliability and consistent performance.
2 FLM1414-3F internally matched power gaas fet power derating curve 50 0 100 150 200 case temperature ( c) 30 20 10 total power dissipation (w) output power & im 3 vs. input power v ds =10v f1 = 14.5 ghz f2 = 14.51 ghz 2 - tone test 20 18 pout im 3 22 24 26 input power (s.c.l.) (dbm) s.c.l.: single carrier level output power (s.c.l.) (dbc) -25 -15 -35 -45 -55 27 25 23 29 33 31 21 im 3 (dbc) output power vs. frequency pin=31dbm 29dbm 27dbm 25dbm 14.0 14.4 14.5 14.3 14.1 14.2 frequency (ghz) 32 33 34 35 36 output power (dbm) output power vs. input power 18 26 24 28 30 32 34 36 20 22 24 26 28 30 32 20 10 30 40 input power (dbm) output power (dbm) add p out add (%) v ds =10v f = 14.25 ghz v ds =10v p 1db
3 FLM1414-3F internally matched power gaas fet s-parameters v ds = 10v, i ds = 900ma frequency s11 s21 s12 s22 (mhz) mag ang mag ang mag ang mag ang 13800 .455 -48.9 2.070 141.1 .075 132.4 .555 71.5 13900 .417 -62.3 2.158 130.4 .081 122.1 .528 63.6 14000 .384 -81.2 2.237 118.7 .086 107.9 .491 55.1 14100 .343 -101.5 2.288 106.8 .092 94.3 .449 47.2 14200 .329 -125.2 2.313 94.4 .097 80.1 .398 39.6 14300 .321 -151.3 2.306 82.3 .099 66.1 .344 33.1 14400 .347 -174.4 2.272 69.9 .102 50.7 .283 28.3 14500 .376 163.7 2.208 58.3 .104 36.6 .223 25.2 14600 .413 147.0 2.130 46.3 .103 25.0 .174 23.7 14700 .454 131.6 2.045 35.1 .103 10.9 .139 26.5 +j250 +j100 +j50 +j25 +j10 0 -j10 -j25 -j50 -j100 -j250 s 11 s 22 180 +90 0 -90 s 21 s 12 scale for |s 21 | scale for |s 12 | 250 100 50 ? 13.8 ghz 13.8 ghz 14.7 14.7 14.5 14.5 14.2 14.2 14.0 14.0 13.8 ghz 13.8 ghz 14.7 14.7 14.5 14.5 14.2 14.2 14.0 14.0 10 25 1 2 3 4 0.1 0.2
4 FLM1414-3F internally matched power gaas fet 2-r 1.25 0.15 (0.049) 0.5 (0.020) 8.1 (0.319) 13.0 0.15 (0.512) 16.5 0.15 (0.650) 3.2 max. (0.126) 1.8 0.15 (0.071) 0.1 (0.004) 9.7 0.15 (0.382) 1.5 min. (0.059) 1.5 min. (0.059) 1.15 (0.045) 0.2 max. (0.008) case style "ia" metal-ceramic hermetic package unit: mm(inches) 1. gate 2. source (flange) 3. drain 4. source (flange) 1 2 3 4 eudyna devices inc. products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: caution ?do not put this product into the mouth. ?do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. ?observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. for further information please contact: eudyna devices usa inc. 2355 zanker rd. san jose, ca 95131-1138, u.s.a. tel: (408) 232-9500 fax: (408) 428-9111 www.us.eudyna.com eudyna devices europe ltd. network house norreys drive maidenhead, berkshire sl6 4fj united kingdom tel: +44 (0) 1628 504800 fax: +44 (0) 1628 504888 eudyna devices asia pte ltd. hong kong branch rm. 1101, ocean centre, 5 canton rd. tsim sha tsui, kowloon, hong kong tel: +852-2377-0227 fax: +852-2377-3921 eudyna devices inc. sales division 1, kanai-cho, sakae-ku yokohama, 244-0845, japan tel: +81-45-853-8156 fax: +81-45-853-8170 eudyna devices inc. reserves the right to change products and specifications without notice. the information does not convey any license under rights of eudyna devices inc. or others. ? 2004 eudyna devices usa inc. printed in u.s.a.
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